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| Photocoupler K4N25G * K4N25H These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 6 5 4 0.25 6.4 DIMENSION (Unit : mm) 0.51Min. 3.8 * TTL Compatible Output * Collector-Emitter Voltage : Min.50V * Current Transfer Ratio : Typ.100% (at IF=5mA, VCE=5V) * Electrical Isolation Voltage : AC5000Vrms * UL Recognized File No. E107486 * K4N25G - No Base Connection, K4N25H - With Base Connection 6.4 0.25 FEATURES 0.25 1 2 3 0 -15 8.9 0.25 Orientation Mark 0.25 K4N25G PIN NO. AND INIERNAL CONNECION DIAGRAM 4 5 6 1 2.7Min. 0.5 2.54 0.25 1.2 2 5 3 4 APPLICATIONS * Interface between two circuits of different potential * Vending Machine, Copiers * Measuring Instrument * Home Appliances K4N25H 6 1 2 3 MAXIMUM RATINGS Parameter Forward Current Input Reverse Voltage Peak Forward Current Power Dissipation Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Output Collector-Base Breakdown Voltage** Emitter-Base Breakdown Voltage** Collector Current Collector Power Dissipation Input to Output Isolation Voltage Storage Temperature Operating Temperature Lead Soldering Temperature Total Power Dissipation *3 *2 *1 (Ta=25E ) Symbol IF VR IFP PD BVCEO BVECO BVCBO BVEBO IC PC Viso Tstg Topr Tsol Ptot Rating 50 5 1 70 50 6 80 6 50 150 AC5000 -55~+125 -30~+100 260 200 Unit mA V A mW V V V V mA mW Vrms E E E mW ** Except for K4N25G *1. Input current with 100A pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 Photocoupler K4N25G * K4N25H ELECTRO-OPTICAL CHARACTERISTICS Parameter Forward Voltage Input Reverse Current Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Output Collector-Base Breakdown Voltage ** Emitter-Base Breakdown Voltage ** Collector Dark Current Capacitance Current Transfer Ratio *4 Symbol VF IR CT BVCEO BVECO BVCBO BVEBO ICEO CCE CTR VCE(SAT) CIO RIO tr tf Condition IF=10mA VR=5V V=0, f=1MHz IC=0.5mA IE=0.1mA IC=0.1mA IE=0.1mA IF=0, VCE=10V VCE=0, f=1MHz IF=5mA, VCE=5V IF=5mA, IC=1mA V=0, f=1MHz (Ta=25E , unless otherwise noted) Min. Unit. Typ. Max. 50 6 80 6 50 1.15 30 10 1 1011 3 3 1.30 10 100 600 0.4 V mA pF V V V V nA pF % V pF U A A Collector-Emitter Saturation Voltage Coupled Input-Output Capacitance Input-Output Isolation Resistance Rise Time Fall Time ** Except for K4N25G *4. CTR=(IC/IF) X 100 (%) RH=40~60%, V=500V VCC=10V, RL=100U IC=2mA 2/3 Photocoupler K4N25G * K4N25H Forward Current vs. Ambient Temperature 50 Collector Power Dissipation vs. Ambient Temperature 250 140 Forward Current vs. Forward Voltage Forward Current IF (mA) Forward Current IF (mA) 40 Collector Power Dissipation PC (mW) 200 120 100 Ta=70E 80 60 Ta=25E 40 Ta=-55E 20 30 150 20 100 10 50 0 -20 0 20 40 60 80 100 0 -20 0 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 Ambient Temperature Ta (E) Ambient Temperature Ta (E) Forward Voltage VF (V) Collector Current vs. Collector-Emitter Voltage 1 Ta=25E 40 IF=30mA Dark Current vs. Ambient Temperature 100 Collector Current vs. Ambient Temperature Collector Current IC (mA) Collector current IC (mA) Dark Current ICEO (E) I F=20mA 10 IF=10mA I F=5mA VCE=24V 0.1 30 I F=20mA PC(MAX.) 20 I F=10mA VCE=10V 0.01 1 I F=1mA I F=5mA 10 I F=1mA 0 2 4 6 8 10 0.001 0 20 40 60 80 100 0 -20 0 20 40 60 80 Collector-Emitter voltage VCE (V) Ambient Temperature Ta (E) Ambient Temperature Ta (E) Response Time vs. Load Resistance 500 VCE=5V IC=2mA Ta=25E 100 Collector Current vs. Forward Current Ta=25E VCC=10V Switching Time Test Circuit R VIN VCC RL VO Response Time tr, tf ( s) Collector Current IC (mA) 100 10 tr 10 tf 1 Test Circuit 0.1 Input 0.01 Output 10% 1 0.1 0.1 1 10 0.001 0.1 90% 1 10 100 tr tf Load Resistance RL (U) Forward Current IF (mA) Waveform 3/3 |
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